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2SD1741A Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor |
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2SD1741A Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 200 200 150 180 6 3 2 15 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1741 2SD1741A 2SD1741 2SD1741A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO VCBO VCEO VEBO hFE1 * hFE2 VBE VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 50µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A, f = 1MHz min 200 150 180 6 60 50 typ 20 max 50 50 240 1 1 Unit µA µA V V V V V MHz 2SD1741 2SD1741A *h FE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.0 ±0.3 3.0 ±0.2 3.5 ±0.2 4.6 ±0.4 2 13 1.1 ±0.1 0.75 ±0.1 2.3 ±0.2 0.85 ±0.1 0.4 ±0.1 7.0 ±0.3 0.75 ±0.1 2.3 ±0.2 4.6 ±0.4 1.1 ±0.1 2.0 ±0.2 0.9 ±0.1 3.5 ±0.2 3.0 ±0.2 123 0 to 0.15 0 to 0.15 2.5 0.5 max. |
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