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STP4N52K3 Scheda tecnica(PDF) 5 Page - VBsemi Electronics Co.,Ltd |
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STP4N52K3 Scheda tecnica(HTML) 5 Page - VBsemi Electronics Co.,Ltd |
5 / 9 page Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 T , Case Temperature ( C) ° C VDS Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS R G D.U.T. 10 V + - VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (s) 1 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) A R G IAS 0.01 Ω tp D.U.T. L VDS + - VDD Driver A 15 V 20 V tp V DS IAS E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP4N52K3 5 |
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