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STP3NC60 Scheda tecnica(PDF) 6 Page - VBsemi Electronics Co.,Ltd

Il numero della parte STP3NC60
Spiegazioni elettronici  N-Channel 650 V (D-S) MOSFET
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Produttore elettronici  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STP3NC60 Scheda tecnica(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche
Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
25
50
75
100
125
150
0
200
400
600
800
Starting T , Junction Temperature ( C)
J
°
ID
TOP
BOTTOM
2.3A
3.3A
4A
700
720
740
760
780
800
01
23
4
5
6
A
av
I
, Avalanche Current (A)
QG
QGS
QGD
VG
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STP3NC60
6


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