STN4526S8RG datasheet(2/8 Pages) VBSEMI

Il numero della parte	STN4526S8RG

Spiegazioni elettronici	N-Channel 100-V (D-S) MOSFET

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Produttore elettronici	VBSEMI [VBsemi Electronics Co.,Ltd]

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Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

100

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

110

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 12.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.5

5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

µA

VDS = 100 V, VGS = 0 V, TJ = 125 °C

50

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 10 V

50

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 15 A

0.0185



Forward Transconductancea

gfs

VDS = 15 V, ID = 15 A

33

S

Dynamicb

Input Capacitance

Ciss

VDS = 50 V, VGS = 0 V, f = 1 MHz

2400

pF

Output Capacitance

Coss

230

Reverse Transfer Capacitance

Crss

80

Total Gate Charge

Qg

VDS = 50 V, VGS = 10 V, ID = 50 A

38

nC

Gate-Source Charge

Qgs

14

Gate-Drain Charge

Qgd

Gate Resistance

Rg

f = 1 MHz

1.6

2.5



Turn-On Delay Time

td(on)

VDD = 50 V, RL = 1 

ID  50 A, VGEN = 10 V, Rg = 1 

12

20

ns

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

18

35

Fall Time

tf

815

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

IS

TC = 25 °C

50

A

Pulse Diode Forward Currenta

ISM

100

Body Diode Voltage

VSD

IS = 15 A

0.85

1.5

V

Body Diode Reverse Recovery Time

trr

IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C

80

120

ns

Body Diode Reverse Recovery Charge

Qrr

160

240

nC

Reverse Recovery Fall Time

ta

57

ns

Reverse Recovery Rise Time

tb

23

70

12

STN4526S8RG

2

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