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2SD1538A Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor |
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2SD1538A Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A s Features q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1538 2SD1538A 2SD1538 2SD1538A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 * VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V min 20 40 45 90 typ 120 0.2 0.5 0.1 max 50 50 50 260 0.5 1.5 Unit µA µA V V V MHz µs µs µs 2SD1538 2SD1538A 2SD1538 2SD1538A *h FE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5 ±0.2 6.0 ±0.5 1.5max. 0.8 ±0.1 5.08 ±0.5 2.54 ±0.3 1.1max. 0.5max. 1.0 ±0.1 3.4 ±0.3 2 13 Unit: mm 8.5 ±0.2 6.0 ±0.3 3.4 ±0.3 2.54 ±0.3 5.08 ±0.5 1.0 ±0.1 0.8 ±0.1 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS) |
Codice articolo simile - 2SD1538A |
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