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2SD1302 Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor |
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2SD1302 Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter s Features q Low collector to emitter saturation voltage VCE(sat). q Low ON resistance Ron. q High foward current transfer ratio hFE. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0 ±0.2 4.0 ±0.2 0.45 +0.2 –0.1 0.45 +0.2 –0.1 1.27 1.27 2.54 ±0.15 2 13 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Ron *3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A *2 VCE = 2V, IC = 1A *2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 25 20 12 200 60 typ 0.13 200 10 1.0 max 100 800 0.4 1.2 Unit nA V V V V V MHz pF Ω *1h FE1 Rank classification Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 *2 Pulse measurement *3R on Measurement circuit V B I B=1mA R on= !1000( Ω) f=1kHz V=0.3V 1k Ω V A V V V A–VB V B |
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