2SD1302 datasheet(1/2 Pages) PANASONIC

Il numero della parte	2SD1302

Spiegazioni elettronici	Silicon NPN epitaxial planer type(For low-voltage output amplification)

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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1

Transistor

2SD1302

Silicon NPN epitaxial planer type

For low-voltage output amplification

For muting

For DC-DC converter

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Low ON resistance Ron.

q

High foward current transfer ratio hFE.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

25

20

12

1

0.5

600

150

–55 ~ +150

Unit

V

A

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

ON resistanse

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Ron

*3

Conditions

VCB = 25V, IE = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 2V, IC = 0.5A

*2

VCE = 2V, IC = 1A

*2

IC = 0.5A, IB = 20mA

IC = 0.5A, IB = 50mA

VCB = 10V, IE = –50mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

25

20

12

200

60

typ

0.13

200

10

1.0

max

100

800

0.4

1.2

Unit

nA

V

MHz

pF

Ω

*1h

FE1 Rank classification

Rank

R

S

T

hFE1

200 ~ 350

300 ~ 500

400 ~ 800

*2 Pulse measurement

*3R

on Measurement circuit

V

B

I

B=1mA

R

on=

!1000(

Ω)

f=1kHz

V=0.3V

1k

Ω

V

A

V

A–VB

V

B

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