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BD9P105MUF-CE2 Scheda tecnica(PDF) 54 Page - Rohm |
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BD9P105MUF-CE2 Scheda tecnica(HTML) 54 Page - Rohm |
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54 / 60 page  54/57 © 2019 ROHM Co., Ltd. All rights reserved. 28.Apr.2020 Rev.001 www.rohm.com TSZ22111 • 15 • 001 BD9P1x5MUF-C Series TSZ02201-0J1J0AL01500-1-2 Operational Notes - continued 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 93. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 12. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 13. Over Current Protection Circuit (OCP) This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit. N N P + P N N P + P Substrate GND N P + N N P + N P P Substrate GND GND Parasitic Elements Pin A Pin A Pin B Pin B B C E Parasitic Elements GND Parasitic Elements C B E Transistor (NPN) Resistor N Region close-by Parasitic Elements |
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