TSP50N06M datasheet(1/7 Pages) VBSEMI

Il numero della parte	TSP50N06M

Spiegazioni elettronici	N-Channel 60-V (D-S) MOSFET

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FEATURES

•

175 °C Junction Temperature

•

TrenchFET® Power MOSFET

• Material categorization:

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t

 10 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

60

0.0

11 at V

GS = 10 V

60

0.01

2 at V

GS = 4.5 V

50

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

b

TC = 25 °C

ID

60

A

TC = 100 °C

50a

Pulsed Drain Current

IDM

200

Continuous Source Current (Diode Conduction)

IS

50a

Avalanche Current

IAS

50

Single Avalanche Energy (Duty Cycle

 1 %)

L = 0.1 mH

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

PD

136

W

TA = 25 °C

3b, 8.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 sec

RthJA

15

18

°C/W

Steady State

40

50

Maximum Junction-to-Case

RthJC

0.85

1.1

N-Channel 60-V (D-S) MOSFET

TO-220AB

G

D

S

E-mail：China@VBsemi TEL:86-755-83251052

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