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SPN9910 Datasheet(Scheda tecnica) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numero della parte SPN9910
Dettagli  N-Channel MOSFET uses advanced trench technology
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Produttore  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN9910 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3
Ls
Continuous Source Current
---
45
---
A
lsm
Pulsed Source Current
180
---
A
trr
Reverse Recovery Time
3
24
---
Ns
qrr
Reverse Recovery Charge
3
30
---
nc
Notes:
Typical Characteristics: (T
C=25unless otherwise noted)
TJ=25℃,IF=15A
di/dt=100A/μs
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=30V,V
G=10V, RG=25Ω
3 Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25
Figure1. Output Characteristics
Figure2. Transfer Characteristics
VDS Drain-Source Voltage (V)
VGS Gate-Source Voltage (V)
Figure3. BVDSS vs Junction Temperature
Figure4. ID vs Junction Temperature
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
SPN9910


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