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SPN4850 Datasheet(Scheda tecnica) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numero della parte SPN4850
Dettagli  N-Channel MOSFET uses advanced trench technology
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Produttore  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN4850 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics:(T
C=25
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
△BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ ,
ID=1mA
---
---
---
V/℃
IDSS
Dra i n-Source Leakage Current
VDS=30V , VGS=0V ,
TJ=25℃
---
---
1
uA
VDS=0V , VGS=0V ,
TJ=125℃
---
---
10
uA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1
1.6
2.2
V
△VGS(th)
VGS(th) Temperature Coefficient
---
---
---
mV/
RDS(ON)
Sta ti c Drain-Source On Resistance
VGS=10V,ID=8A
---
15.6
20
VGS=4.5V,ID=8A
---
20
28
GFS
Forwa rd Tra nsconductance
VDS=5V, ID=8A
18
---
---
S
Dynamic Characteristics
4
Ciss
Input Ca pacitance
VDS=30V, VGS=0V, f=1MHz
---
1600
---
pF
Coss
Output Ca pacitance
---
112
---
Crss
Reverse Tra nsfer Ca pacitance
---
98
---
Switching Characteristics
td(on)
Turn-On Delay Ti me
2,3
VDS=30V, , RL=1Ω
RGEN=3Ω, VGS=10V
---
---
---
ns
tr
Ri s e Time
2,3
---
5.5
---
ns
td(off)
Turn-Off Delay Ti me
2,3
---
29
---
ns
tf
Fa ll Ti me
2,3
---
4.5
---
ns
SPN4850


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