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SPN4546 Datasheet(Scheda tecnica) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numero della parte SPN4546
Dettagli  N-Channel MOSFET uses advanced trench technology
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Produttore  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN4546 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(T
C=25
unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current – Continuous (TC=25℃ )
6.7
A
Drain Current – Continuous (TC=100℃ )
4.3
IDM
Drain Current – Pulsed
1
26.8
PD
Power Dissipation (TC=25℃ )
2.5
W
Power Dissipation – Derate above 25℃
0.02
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics:
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
50
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
62
G
D
D
D
D
S1
S
S
SPN4546


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