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SPN4546 Scheda tecnica(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Il numero della parte SPN4546
Spiegazioni elettronici  N-Channel MOSFET uses advanced trench technology
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Produttore elettronici  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN4546 Scheda tecnica(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SPN4546 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN4546 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN4546 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN4546 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Normalized RDSON vs. T
www.doingter.cn
3
Qg
Tota l Gate Charge
2,3
VGS=4.5V, VDS=20V,
ID=3A
---
2.8
5.6
nC
Qgs
Ga te-Source Cha rge
2,3
---
0.5
1
nC
Qgd
Ga te-Drain “Miller” Charge
2,3
---
1.5
3
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=1A,TJ=25
---
---
1
V
IS
Conti nuous Source Current
VG=VD=0V , Force
Current
---
---
6.7
A
ISM
Pul s ed Source Current
---
---
13.4
A
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Typical Characteristics: (T =25unless otherwise noted)
Fig.1 Continuous Drain Current vs. TC
Fig.2
J
TC , Case Temperature (℃)
TJ , Junction Temperature (℃)
SPN4546


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