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SPN80T10 Scheda tecnica(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Il numero della parte SPN80T10
Spiegazioni elettronici  N-Channel MOSFET uses advanced trench technology
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Produttore elettronici  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN80T10 Scheda tecnica(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
110
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=100V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
3.2
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=40A
---
4.6
5.5
mΩ
GFS
Forward Transconductance
VDS=50V, ID=40A
170
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
10500
---
pF
Coss
Output Capacitance
---
914
---
Crss
Reverse Transfer Capacitance
---
695
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=65V,ID=40A
VGS=10V,RGEN=2.5Ω
---
25
---
ns
tr
Rise Time
---
100
---
ns
td(off)
Turn-Off Delay Time
---
65
---
ns
tf
Fall Time
---
77
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=44V,
ID=40A
---
120
---
nC
Qgs
Gate-Source
Charge
---
30
---
nC
Qgd
Gate-Drain “Miller” Charge
---
35
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=40A
---
0.85
1.2
V
SPN80T10


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