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SPN65T10 Datasheet(Scheda tecnica) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numero della parte SPN65T10
Dettagli  N-Channel MOSFET uses advanced trench technology
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Produttore  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN65T10 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics:(T
C=25
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
110
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=100V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
2
3
4
V
RDS(ON)
Dra i n-Source On Resistance
2
VGS=10V,ID=40A
---
9.9
13
VGS=4.5V,ID=A
---
---
---
GFS
Forwa rd Tra nsconductance
VDS=50V, ID=40A
100
---
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=50V, VGS=0V, f=1MHz
---
4800
---
pF
Coss
Output Ca pacitance
---
304
---
Crss
Reverse Tra nsfer Ca pacitance
---
150
---
Switching Characteristics
td(on)
Turn-On Delay Ti me
VDD=50V, ID=40A,
RGEN=2.5Ω.VGS=10V
---
15
---
ns
tr
Ri s e Time
---
50
---
ns
td(off)
Turn-Off Delay Ti me
---
40
---
ns
tf
Fa ll Ti me
---
55
---
ns
Qg
Tota l Gate Charge
VGS=10V, VDS=80V,
ID=40A
---
85
---
nC
Qgs
Ga te-Source Cha rge
---
18
---
nC
Qgd
Ga te-Drain “Miller” Charge
---
28
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=40A
---
---
-1.2
V
SPN65T10


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