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SPN65T10 Scheda tecnica(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Il numero della parte SPN65T10
Spiegazioni elettronici  N-Channel MOSFET uses advanced trench technology
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Produttore elettronici  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN65T10 Scheda tecnica(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=100V,ID=100A,RDS(ON)<13mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(T
C=25
unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-
1
100
A
Continuous Drain Current-TC=100℃
80
Pulsed Drain Current
2
380
EAS
Single Pulse Avalanche Energy
3
800
mJ
PD
Power Dissipation
4
200
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
Thermal Characteristics:
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
1
0.75
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
1
---
D S
G
SPN65T10


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