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SPN65T10 Datasheet(Scheda tecnica) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numero della parte SPN65T10
Dettagli  N-Channel MOSFET uses advanced trench technology
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Produttore  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN65T10 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3 ?
Ls
Di ode Forward Current (Note 2)
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---
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57
A
Trr
Reverse Recovery Ti me
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38
80
NS
Qrr
Reverse Recovery Cha rge
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53
100
NC
Notes:
Typical Characteristics? (T
C=25? unless otherwise noted)
TJ = 25C, IF = 40A
di/dt = 100A/
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ? 10 sec.
3. Pulse Test: Pulse Width ? 300?s, Duty Cycle ? 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25 ,V
? DD=50V,VG=10V,L=0.5mH,Rg=25?
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
TJ-Junction Temperature(?)
Figure 4 Rdson-JunctionTemperature
SPN65T10


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