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FTK5N60P Scheda tecnica(PDF) 7 Page - First Silicon Co., Ltd |
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FTK5N60P Scheda tecnica(HTML) 7 Page - First Silicon Co., Ltd |
7 / 7 page TYPICAL CHARACTERISTICS(Cont.) 0 0 Drain Current, ID (A) 2 4 VGS =20V 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 6 8 10 12 Note: T J=25˚C VGS=10V 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150˚C 25˚C Notes: 1. VGS = 0V 2. 250μs Test 1200 0 0.1 Drain-SourceVoltage, VDS (V) 1000 200 1 10 Ciss 800 600 Notes: 1. VGS=0V 2. f = 1MHz Ciss Cgs +Cgd (Cds=shorted ) Coss=Cds+Cgd Crss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 Note: ID = 4A 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics Coss Crss 400 Notes: 1 θJC (t) = 1 18˚C/W Max 2 Duty Factor , D =t1/t2 3 TJM-TC=PDM×θJC(t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve 2015. 03. 30 7/7 Revision No : 0 Power MOSFET FTK5N60P/F/D/I |
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