FTK5N60P datasheet(7/7 Pages) FS

Il numero della parte	FTK5N60P

Spiegazioni elettronici	5 Amps, 600 Volt N-CHANNEL POWER MOSFET

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Produttore elettronici	FS [First Silicon Co., Ltd]

Homepage	http://www.firstsilicon.co.kr/

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TYPICAL CHARACTERISTICS(Cont.)

0

Drain Current, ID (A)

2

4

VGS =20V

1

2

4

5

6

On-Resistance Variation vs. Drain

Current and Gate Voltage

3

6

8

10 12

Note: T J=25˚C

VGS=10V

1

0.1

0.2

Source-Drain Voltage, VSD (V)

On State Current vs. Allowable Case

Temperature

1.8

0.4 0.6 0.8 1.0 1.2

1.6

1.4

10

150˚C

25˚C

Notes:

1. VGS = 0V

2. 250μs Test

1200

0

0.1

Drain-SourceVoltage, VDS (V)

1000

200

1

10

Ciss

800

600

Notes:

1. VGS=0V

2. f = 1MHz

Ciss Cgs +Cgd (Cds=shorted )

Coss=Cds+Cgd Crss=Cgd

Capacitance Characteristics

(Non-Repetitive)

0

Total Gate Charge, QG (nC)

5

15

25

Note: ID = 4A

8

10

12

10

6

4

2

0

VDS=120V

VDS=300V

VDS=480V

20

Gate Charge Characteristics

Coss

Crss

400

Notes:

1 θJC (t) = 1 18˚C/W Max

2 Duty Factor , D =t1/t2

3 TJM-TC=PDM×θJC(t)

1

0.1

0.01

1E-5 1E-4 1E-3 0.01 0.1

1 10

Square Wave Pulse Duration, t1 (sec)

Transient Thermal Response

Curve

2015. 03. 30

7/7

Revision No : 0

Power MOSFET

FTK5N60P/F/D/I

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