SM1105NSV datasheet(2/6 Pages) VBSEMI

Il numero della parte	SM1105NSV

Spiegazioni elettronici	N-Channel 100-V (D-S) MOSFET

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Produttore elettronici	VBSEMI [VBsemi Electronics Co.,Ltd]

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Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

µA

VDS = 100 V, VGS = 0 V, TJ = 55 °C

20

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

40

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 6.0 A

Ω

VGS = 10 V, ID = 4.0 A, TJ = 125 °C

0.110

VGS = 10 V, ID = 4.0 A, TJ = 175 °C

0.140

VGS = 4.5 V, ID = 3.1 A

0.120

Forward Transconductancea

gfs

VDS = 15 V, ID = 4.0 A

25

S

Diode Forward Voltagea

VSD

IS = 1.7 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 50 V, VGS = 10 V, ID = 4.0 A

18

27

nC

Gate-Source Charge

Qgs

3.4

Gate-Drain Charge

Qgd

5.3

Gate Resistance

Rg

VGS = 0.1 V, f = 5 MHz

0.5

1.4

2.4

Ω

Turn-On Delay Time

td(on)

VDD = 50 V, RL = 30 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

10

20

ns

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

25

50

Fall Time

tf

12

24

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, dI/dt = 100 A/µs

50

80

Output Characteristics

0

8

16

24

32

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 5 V

4 V

2 V

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

0

8

16

24

32

40

0

1234

5

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

TC = 150 °C

1.5

3

0.122

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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