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FTK4N60P Scheda tecnica(PDF) 3 Page - First Silicon Co., Ltd |
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FTK4N60P Scheda tecnica(HTML) 3 Page - First Silicon Co., Ltd |
3 / 7 page 2008. 07. 10 3/7 FTK4N60P / F / D / I Revision No : 1 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) VSD VGS = 0 V, IS = 4.0 A 1.4 V IS 4.0 A ISM 16 A tRR 310 ns QRR VGS = 0 V, IS = 4.0A, dlF/dt =100 A/µs (Note 4) 2.26 µC Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 17mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX |
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