FTK4N60P datasheet(3/7 Pages) FS

Il numero della parte	FTK4N60P

Spiegazioni elettronici	4 Amps, 600 Volt N-CHANNEL POWER MOSFET

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Produttore elettronici	FS [First Silicon Co., Ltd]

Homepage	http://www.firstsilicon.co.kr/

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3 / 7 page

2008. 07. 10

3/7

FTK4N60P / F / D / I

Revision No : 1

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

VSD

VGS = 0 V, IS = 4.0 A

1.4

V

IS

4.0

A

ISM

16

A

tRR

310

ns

QRR

VGS = 0 V, IS = 4.0A,

dlF/dt =100 A/µs (Note 4)

2.26

µC

Note:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 17mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

Reverse Recovery Time

Reverse Recovery Charge

MAX

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