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FTK4N60P Scheda tecnica(PDF) 7 Page - First Silicon Co., Ltd |
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FTK4N60P Scheda tecnica(HTML) 7 Page - First Silicon Co., Ltd |
7 / 7 page TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150 ˚C 25 ˚C Notes: 1. VGS = 0V 2. 250 μs Test 1200 0 0.1 Drain-SourceVoltage, VDS (V) 1000 200 1 10 Ciss 800 600 Notes: 1. VGS=0V 2. f = 1MHz Ciss Cgs +Cgd (Cds=shorted ) Coss=Cds+Cgd Crss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 Note: ID = 4A 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics Coss Crss 400 Notes: 1 θ J C (t) = 1 18 ˚C/W Max 2 Duty Factor , D =t 1/t 2 3 TJM-TC=PDM× θ J C(t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve 2008. 07. 10 7/7 FTK4N60P / F / D / I Revision No : 1 Power MOSFET 6 0 5 0 3 0 2 0 1 0 0 4 0 4 0 2 3 8 1 56 7 VGS=10V VGS=7V |
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