NVH4L020N120SC1 datasheet(5/8 Pages) ONSEMI

Il numero della parte	NVH4L020N120SC1

Spiegazioni elettronici	MOSFET - SiC Power, Single N-Channel, TO247-4L

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NVH4L020N120SC1

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TYPICAL CHARACTERISTICS

Figure 7. Gate−to−Source Voltage vs. Total

Charge

Figure 8. Capacitance vs. Drain−to−Source

Voltage

Qg, GATE CHARGE (nC)

250

0

−5

0

20

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

tAV, TIME IN AVALANCHE (ms)

TC, CASE TEMPERATURE (°C)

10

0.001

1

10

150

100

25

0

120

Figure 11. Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1K

10

1

0.1

0.01

1

10

1000

ID = 80 A

Ciss

Coss

Crss

125

VGS = 20 V

100

5

Figure 12. Single Pulse Maximum Power

Dissipation

t, PULSE WIDTH (sec)

0.00001

10K

100K

VDD = 400 V

0.0001

0.001

0.1

100

RqJC = 0.30°C/W

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1

10

100

1K

100K

0.1

1

100

10

800

40

75

1K

Single Pulse

TJ = Max Rated

RqJC = 0.3°C/W

TC = 25°C

10 ms

100 ms

1 ms

10

15

100

80

50

175

VDD = 800 V

VDD = 600 V

f = 1 MHz

VGS = 0 V

1

0.1

0.01

TJ = 150°C

TJ = 25°C

20

60

100

100 ms

10 ms

5K

0.01

Single Pulse

RqJC = 0.30°C/W

TC = 25°C

100

200

50

150

0.1

100

10K

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
ON Semiconductor	NVH4L020N120SC1	363Kb / 8P	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4
ON Semiconductor	NVH4L020N120SC1	363Kb / 8P	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4

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