2SC3506 datasheet(1/3 Pages) PANASONIC

Il numero della parte	2SC3506

Spiegazioni elettronici	Silicon NPN triple diffusion planar type(For high-speed switching)

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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Power Transistors

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

1000

800

7

6

3

2

70

3

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

2SC3506

Silicon NPN triple diffusion planar type

For high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO(sus)

*

hFE

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 1000V, IE = 0

VEB = 7V, IC = 0

IC = 0.5A, L = 50mH

VCE = 5V, IC = 2A

IC = 2A, IB = 0.4A

VCE = 5V, IC = 0.2A, f = 1MHz

IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,

VCC = 250V

min

800

6

typ

4

max

50

1.5

1

2.5

0.5

Unit

µA

V

MHz

µs

*V

CEO(sus) Test circuit

X

L 50mH

15V

1

Ω

Y

G

6V

120

Ω

50/60Hz

mercury relay

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3 Full Pack Package(a)

15.0

±0.3

5.0

±0.2

11.0

±0.2

10.9

±0.5

5.45

±0.3

3

2

1

1.1

±0.1

2.0

±0.2

0.6

±0.2

2.0

±0.1

φ3.2±0.1

3.2

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