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SI4376DY-T1 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI4376DY-T1 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page  Si4376DY Vishay Siliconix www.vishay.com 2 Document Number: 71934 S-31726—Rev. C, 18-Aug-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS ID = 250 mA Ch-1 1.0 3.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Ch-2 0.8 2.0 V Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V Ch-1 "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V Ch-2 "100 nA VDS = 24 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V Ch-2 100 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V VGS = 0 V TJ = 85_C Ch-1 15 mA VDS = 24 V, VGS = 0 V, TJ = 85_C Ch-2 2000 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 A On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-2 20 A VGS = 10 V ID = 7 5 A Ch-1 0.016 0.020 Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 7.5 A Ch-2 0.015 0.019 W Drain-Source On-State Resistanceb rDS(on) VGS = 4 5 V ID = 6 5 A Ch-1 0.022 0.0275 W VGS = 4.5 V, ID = 6.5 A Ch-2 0.018 0.023 Forward Transconductanceb gf VDS = 15 V ID = 7 5 A Ch-1 30 S Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A Ch-2 30 S Diode Forward Voltageb VSD IS = 1 A VGS = 0 V Ch-1 0.75 1.2 V Diode Forward Voltageb VSD IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 V Dynamica Total Gate Charge Qg Ch-1 9 14 Total Gate Charge Qg Ch-2 12.5 20 Gate Source Charge Q VDS = 15 V VGS = 4 5 V ID = 7 5 A Ch-1 3.8 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.5 A Ch-2 4.0 nC Gate Drain Charge Q d Ch-1 3.1 Gate-Drain Charge Qgd Ch-2 3.2 Gate Resistance R Ch-1 0.5 1.3 2.0 W Gate Resistance Rg Ch-2 0.5 1.3 1.8 W Turn On Delay Time td( ) Ch-1 12 18 Turn-On Delay Time td(on) Ch-2 12 20 Rise Time t Ch-1 11 17 Rise Time tr VDD = 15 V, RL = 15 W Ch-2 11 17 Turn Off Delay Time td( ff) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 27 40 ns Turn-Off Delay Time td(off) Ch-2 40 66 ns Fall Time tf Ch-1 9 14 Fall Time tf Ch-2 10 15 Source Drain Reverse Recovery Time t IF = 1 7 A di/dt = 100 A/ms Ch-1 35 55 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms Ch-2 28 45 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.50 V Forward Voltage Drop VF IF = 1.0 A, TJ = 125_C 0.36 0.42 V Vr = 30 V 0.004 0.100 Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100_C 0.7 10 mA Maximum Reverse Leakage Current Irm Vr = -30 V, TJ = 125_C 3.0 20 mA Junction Capacitance CT Vr = 10 V 50 pF |
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