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STGP14NC60KD Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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2 / 14 page STGP14NC60KD - STGF14NC60KD - STGB14NC60KD 2/14 Table 3: Absolute Maximum ratings ( ) Pulse width limited by Max Junction Temperature. Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters (#) Calculated according to the iterative formula: Symbol Parameter Value Unit STGB14NC60KD STGP14NC60KD STGF14NC60KD VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 25 11 A IC Collector Current (continuous) at TC = 100°C (#) 14 7 A ICM ( ) Collector Current (pulsed) 50 A IF Diode RMS Forward Current at TC = 25°C 20 A PTOT Total Dissipation at TC = 25°C 80 25 W Derating Factor 0.64 0.20 W/°C VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V Tstg Storage Temperature – 55 to 150 °C Tj Operating Junction Temperature Min. Typ. Max. Rthj-case Thermal Resistance Junction-case TO-220 D²PAK 1.56 °C/W TO-220FP 5.0 °C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC= 1 mA, VGE= 0 600 V ICES Collector cut-off Current (VGE = 0) VCE= Max Rating, TC= 25°C VCE= Max Rating, TC= 125°C 10 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250 µA 5 7 V VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 7A VGE= 15V, IC= 7A, Tc= 125°C 2.0 1.8 2.5 V V I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × -------------------------------------------------------------------------------------------------- = |
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