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AM4512C Scheda tecnica(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM4512C Scheda tecnica(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
1 / 8 page www.doingter.cn — 1 — Description: This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON),low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application. Features: 1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ@VGS=10V P-Channel: V DS=-30V,ID=-6A,RDS(ON)<65mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±12 ±12 V ID Continuous Drain Current- Tj=150℃ 6 -6 A Continuous Drain Current-TC=70℃ 5.8 -5 ±30 A PD Power Dissipation Ta=25℃ 2 W Pulsed Drain Current Ta=25℃ 1.44 ℃/ W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics: Symbol Parameter N-Channel P-Channel Units G2 D1 D1 D2 D2 S1 G1 S2 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 IDM Pulsed Drain Current A B A A AM 4512C |
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