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PM505BA Scheda tecnica(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PM505BA Scheda tecnica(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
1 / 8 page PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz.Copper. Junction-to-Ambient 2 THERMAL RESISTANCE RDS(ON) PARAMETERS/TEST CONDITIONS Gate-Source Voltage 40mΩ @V GS = -4.5V TA = 70 °C TA = 25 °C Pulsed Drain Current 1 RqJA TA = 25 °C SYMBOL TA = 70 °C -4A ID -20V Continuous Drain Current LIMITS UNITS -21 -3 VGS Operating Junction & Storage Temperature Range Tj, Tstg ID IDM TYPICAL -55 to 150 MAXIMUM 0.6 0.9 W ±8 -4 A 126 °C V SYMBOL PD Power Dissipation REV 1.0 1 2015/7/3 |
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