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STB135N10 Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STB135N10
Spiegazioni elettronici  N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB135N10 Scheda tecnica(HTML) 2 Page - STMicroelectronics

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STB135N10 STP135N10
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (5)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
24
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 67.5 A
0.007
0.009
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (5)
Forward Transconductance
VDS = 25 V
ID = 67.5 A
TBD
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
6350
890
250
pF
pF
pF


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