KTA1553T datasheet(1/3 Pages) KEC

Il numero della parte	KTA1553T

Spiegazioni elettronici	EPITAXIAL PLANAR PNP TRANSISTOR

Download	3 Pages

Scroll/Zoom	100%

Produttore elettronici	KEC [KEC(Korea Electronics)]

Homepage	http://www.keccorp.com

Logo

1 / 3 page

2001. 6. 28

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTA1553T

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 0

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS AND STROBES APPLICATION.

FEATURES

Adoption of MBIT Processes.

High Current Capacitance.

Low Collector-to-Emitter Saturation Voltage.

Ultrasmall-Sized Package permitting applied sets to be

made small and slim.

High Allowable Power Dissipation.

Complementary to KTC3553T.

MAXIMUM RATING (Ta=25 )

DIM MILLIMETERS

A

B

D

E

TSM

2.9 0.2

1.6+0.2/-0.1

0.70 0.05

0.4 0.1

2.8+0.2/-0.3

1.9 0.2

0.95

0.16 0.05

0.00-0.10

0.25+0.25/-0.15

C

F

G

H

I

J

K0.60

L0.55

K

B

E

H

J

2

1

3

+_

1. EMITTER

2. BASE

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

DC

IC

-5

A

Pulse

ICP

-7

Base Current

IB

-1.2

A

Collector Power Dissipation

PC *

0.9

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

* Package mounted on a ceramic board (600

0.8 )

Type Name

Marking

Lot No.

S M

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-40V, IE=0

-

-0.1

A

Emitter Cut-off Current

IEBO

VEB=-4V, IC=0

-

-0.1

A

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-10 A, IE=0

-50

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA, IB=0

-50

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-10 A, IC=0

-6

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-2A, IB=-40mA

-

-225

-450

mV

Base-Emitter Saturation Voltage

VBE(sat)

IC=-2A, IB=-40mA

-

-0.80

-1.2

V

DC Current Gain

hFE

VCE=-2V, IC=-500mA

200

-

560

Transition Frequency

fT

VCE=-10V, IC=-500mA

-

250

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz

-

50

-

pF

Swiitching

Time

Turn-On Time

ton

-

39

-

nS

Storage Time

tstg

-

225

-

Fall Time

tf

-

25

-

IB1

B2

I

INPUT

OUTPUT

50

Ω

24Ω

100

µF

PW=20

µs

DC 1%

470

µF

R

V

B

R

BE

V

=5V

CC

V

=-12V

-20I =20I =I =-2.5A

B1

B2 C

<

=

Codice articolo simile - KTA1553T

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Kinetic Technologies.	KTA1550	157Kb / 4P	Dual Channel Active EMI & ESD Suppressor for Ethernet Applications August 2022 - Revision 04e
	KTA1550EDS-TR	157Kb / 4P	Dual Channel Active EMI & ESD Suppressor for Ethernet Applications August 2022 - Revision 04e
	KTA1550ESQ-TR	157Kb / 4P	Dual Channel Active EMI & ESD Suppressor for Ethernet Applications August 2022 - Revision 04e
KEC(Korea Electronics)	KTA1551T	87Kb / 3P	RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION
KEC(Korea Electronics)	KTA1551T	425Kb / 1P	TSM PACKAGE

More results

Descrizione simile - KTA1553T

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Hi-Sincerity Mocroelect...	HI350	25Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HI42C	32Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HJ2584	30Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HJ350	23Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HJ649A	27Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HM1426	30Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HM2907A	31Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HM3906	31Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HM64	30Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR
	HM772	46Kb / 5P	PNP EPITAXIAL PLANAR TRANSISTOR
	HA8550	36Kb / 3P	PNP EPITAXIAL PLANAR TRANSISTOR

More results

KTA1553T Scheda tecnica(PDF) 1 Page - KEC(Korea Electronics)

KTA1553T Scheda tecnica(HTML) 1 Page - KEC(Korea Electronics)

Codice articolo simile - KTA1553T

Descrizione simile - KTA1553T

Html Pages

1 2 3

Scheda tecnica Scarica

Link URL