SI6466ADQ datasheet(3/5 Pages) VISHAY

Il numero della parte	SI6466ADQ

Spiegazioni elettronici	N-Channel 2.5-V (G-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si6466ADQ

Vishay Siliconix

Document Number: 71182

S-31725—Rev. B, 18-Aug-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

04

8

12

16

20

0.00

0.01

0.02

0.03

0.04

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Crss

VDS = 10 V

ID = 8.1 A

ID - Drain Current (A)

VGS = 10 V

ID = 8.1 A

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0.05

0

2468

10

TJ = 25_C

ID = 8.1 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

VGS = 4.5 V

TJ = 150_C

VGS = 2.5 V

0

600

1200

1800

2400

3000

04

8

12

16

20

Coss

Ciss

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