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YFW1003 Scheda tecnica(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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YFW1003 Scheda tecnica(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
1 / 6 page YFW1003 SOT23-3L 1 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A Drain Current-Pulsed (Note 1) IDM 24 A Maximum Power Dissipation PD 5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 41.7 /W ℃ VDSS RDS(ON) ID 135 5 A 10V @ (typ) Ω m 100V N-Channel Enhancement MOSFET ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Features Application design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The KF1003 uses advanced trench technology and Description It is ESD protected. G D S 1 2 3 ■ Simplified outline(SOT23-3L) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Thermal Characteristic |
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