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MMBD770T1 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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MMBD770T1 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 8 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • Available in 8 mm Tape and Reel MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMBD110T1 MMBD330T1 MMBD770T1 VR 7.0 30 70 Vdc Forward Power Dissipation TA = 25°C PF 120 mW Junction Temperature TJ – 55 to +125 °C Storage Temperature Range Tstg – 55 to +150 °C DEVICE MARKING MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H Thermal Clad is a registered trademark of the Bergquist Company. Order this document BY MMBD110T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 CASE 419A–02, STYLE 2 SOT-323/SC–70 1 2 3 © Motorola, Inc. 1996 |
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