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WSF15N10G Scheda tecnica(PDF) 4 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF15N10G Scheda tecnica(HTML) 4 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
4 / 6 page N-Ch MOSFET Page 4 www.winsok.tw Dec.2014 WSF15N10G Figure 7, Threshold voltage Figure 8, Forward characteristic of body diode Figure 9, Drain-source on-state resistance Figure 10, Drain current Figure 11, Safe operation area TC=25 ℃ Figure 12, Max. transient thermal impedance -50 0 50 100 150 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID = 250 μA Tj, Junction Temperature (℃) 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 T j = 25 ℃ V SD, Source-Drain voltage (V) 8 16 24 32 40 48 56 0 100m 200m 300m 400m 500m 5.5 V 10 V 5 V 4 V 4.5 V V GS=3.5 V I D, Drain current(A) 0 20 40 60 80 100 120 140 0 3 6 9 12 15 18 T C, Case Temperature (℃) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 ms V DS, Drain-source voltage(V) 10 μs DC 10 ms 100 μs R DS(ON) Limited 10-5 10-4 10-3 10-2 10-1 100 0.01 0.1 1 10 tp Pulse width(s) D= tp/T D= 1 0.5 0.2 0.1 0.05 Single Pulse 0.01 0.02 |
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