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AM29LV065MU110F Scheda tecnica(PDF) 2 Page - Advanced Micro Devices |
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AM29LV065MU110F Scheda tecnica(HTML) 2 Page - Advanced Micro Devices |
2 / 11 page 2 Am29LV065M ADV ANCE I N FO RMAT I O N GENERAL DESCRIPTION The Am29LV065M is a 64 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 bytes. The device has an 8-bit wide data bus, and can be programmed either in the host system or in stan- dard EPROM programmers. An access time of 90, 100, 110, or 120 ns is available. Note that each device has a specific operating voltage range (V CC) and an I/O voltage range (VIO), as speci- fied in the Product Selector Guide and the Ordering In- formation sections. The device is offered in a 48-pin TSOP or 63-ball FBGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V CC input, a high-voltage accelerated program (ACC) input provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also inter- nally latch addresses and data needed for the pro- gramming and erase operations. The sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase oper- ation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to deter- mine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces com- mand sequence overhead by requiring only two write cycles to program data instead of four. The VersatileI/O™ (V IO) control allows the host sys- tem to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the V IO pin. This allows the device to operate in a 1.8 V or 3 V system environment as required. Hardware data protection measures include a low V CC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the pro- gram operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. Th e de vice re du ces po wer con sump tio n in th e standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time. The SecSi (Secured Silicon) Sector provides a 256 byte area for code or data that can be perma- nently protected. Once this sector is protected, no fur- ther changes within the sector can occur. AMD MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effec- tiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. |
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