MJE5852 datasheet(4/8 Pages) ONSEMI

Il numero della parte	MJE5852

Spiegazioni elettronici	PNP SILICON POWER TRANSISTORS

Download	8 Pages

Scroll/Zoom	100%

Produttore elettronici	ONSEMI [ON Semiconductor]

Homepage	http://www.onsemi.com

Logo

4 / 8 page

MJE5850 MJE5851 MJE5852

4

Motorola Bipolar Power Transistor Device Data

1

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

20

1

0

PW Varied to Attain

IC = 100 mA

2

–10 V

t1

ICM

tf Clamped

tf

t

Vclamp

t2

TIME

VCEM

1

2

TUT

RL

VCC

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

t1 ≈

Lcoil (ICM)

VCC

t2 ≈

Lcoil (ICM)

VClamp

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

– V adjusted to obtain desired IB1

+ V adjusted to obtain desired VBE(off)

+ V

50

Ω

2 W

INPUT

0

0.2

µF

0.0025

µF

0.1

µF

500

Ω

1/2 W

500

Ω

0.0033

µF

500

Ω

1/2 W

+ V

50

µF

0.1

µF

MJE15029

1

2

1

Ω 2 W

MJE15028

50

µF

– V

+

–

1/2 W

1N4934

0.1

µF

–

+

500

Ω

1/2 W

0.2

µF

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

IB1

1

2

TURN–ON TIME

Lcoil = 80 mH, VCC = 10 V

Rcoil = 0.7 Ω

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 250 V

RL = 62 Ω

Pulse Width = 10

µs

INDUCTIVE TEST CIRCUIT

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

Vclamp = 250 V

RB adjusted to attain desired IB1

VCE

IC

Table 1. Test Conditions for Dynamic Performance

tti

Figure 7. Inductive Switching Measurements

TIME

IB

VCE

90% IB1

tsr

tc

10%

VCEM

Figure 8. Inductive Switching Times

IC = 4 A

IC/IB = 4

TJ = 25°C

tc 100°C

tsv 100°C

tsv 25°C

tc 25°C

VBE, BASE–EMITTER VOLTAGE (VOLTS)

0

0.4

0.2

1.0

0.6

0.8

3

6

8

0

5

7

2

1

4

0

0.9

0.3

2.7

1.5

2.1

1.2

0.6

3.0

1.8

2.4

IC

10%

ICM

2%

ICM

trv

tfi

90%

ICM

VCEM

Vclamp

Codice articolo simile - MJE5852

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Motorola, Inc	MJE5852	302Kb / 8P	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
STMicroelectronics	MJE5852	71Kb / 4P	HIGH VOLTAGE PNP POWER TRANSISTOR
STMicroelectronics	MJE5852	56Kb / 4P	HIGH VOLTAGE PNP POWER TRANSISTOR September 2003
ON Semiconductor	MJE5852	104Kb / 8P	8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS February, 2006 ??Rev. 4
New Jersey Semi-Conduct...	MJE5852	114Kb / 3P	SWITCHMODE Series PNP Silicon Power Transistors

More results

Descrizione simile - MJE5852

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Boca Semiconductor Corp...	2N3789	124Kb / 3P	SILICON PNP POWER TRANSISTORS
Microsemi Corporation	2N3720	55Kb / 3P	Silicon PNP Power Transistors
Microsemi Corporation	2N6303	56Kb / 3P	Silicon PNP Power Transistors
ON Semiconductor	MJE5730	139Kb / 6P	POWER TRANSISTORS PNP SILICON REV 1
Power Innovations Ltd	BD246	91Kb / 6P	PNP SILICON POWER TRANSISTORS
Quanzhou Jinmei Electro...	2N4898	55Kb / 3P	Silicon PNP Power Transistors
	2N4901	49Kb / 3P	Silicon PNP Power Transistors
	2N6491	103Kb / 3P	Silicon PNP Power Transistors
	2SA1050	151Kb / 3P	Silicon PNP Power Transistors
	2SA1072	162Kb / 3P	Silicon PNP Power Transistors
	2SA1073	162Kb / 3P	Silicon PNP Power Transistors

More results

MJE5852 Scheda tecnica(PDF) 4 Page - ON Semiconductor

MJE5852 Scheda tecnica(HTML) 4 Page - ON Semiconductor

Codice articolo simile - MJE5852

Descrizione simile - MJE5852

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL