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TSC2412CXS Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC2412CXS Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  TSC2412 1-1 2003/12 rev. A TSC2412 General Purpose NPN Transistor BVCEO = 50V Ic = 150mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 50mA / 5mA Features Driver stage of AF amplifier. General purpose switching application Structure Epitaxial planar type. Complementary to TSA1037CX Ordering Information Part No. Packing Package Marking TSC2412CX 3kpcs / Reel SOT-23 C4 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 60V V Collector-Emitter Voltage VCEO 50V V Emitter-Base Voltage VEBO 7 V Collector Current IC 150 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 380uS, Duty <= 2% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 100uA, IE = 0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 7 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 uA Emitter Cutoff Current VEB = 7V, IC = 0 IEBO -- -- 0.1 uA Collector-Emitter Saturation Voltage IC / IB = 50mA / 5mA VCE(SAT)1 -- 0.2 0.4 V DC Current Transfer Ratio VCE = 6V, IC = 1mA hFE 180 -- 820 Transition Frequency VCE =12V, IC=2mA, f=100MHz fT 80 180 -- MHz Output Capacitance VCB = 5V, f=1MHz Cob -- 2 3.5 pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank R S* T Range 180 - 390 270 – 560 410 - 820 Note: * is Typical Pin assignment: 1. Base 2. Emitter 3. Collector |
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