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TSB772SCY Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB772SCY Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSB772S 1-3 2003/12 rev. C TSB772S Low Vce(sat) PNP Transistor BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 20mA Features Low VCE (SAT). Excellent DC current gain characteristics Structure Epitaxial planar type. PNP silicon transistor Ordering Information Part No. Packing Package TSB772SCT Bulk Pack TO-92 TSB772SCY Tape & Reel SOT-89 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO - 50V V Collector-Emitter Voltage VCEO - 50V V Emitter-Base Voltage VEBO - 5 V DC - 3 Collector Current Pulse IC - 7 (note 1) A Collector Power Dissipation TO-92 SOT-89 PD 0.75 0.50 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 350US, Duty <= 2% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = - 50uA, IE = 0 BVCBO - 50 -- -- V Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 BVCEO - 50 -- -- V Emitter-Base Breakdown Voltage IE = - 50uA, IC = 0 BVEBO - 5 -- -- V Collector Cutoff Current VCB = - 40V, IE = 0 ICBO -- -- - 1 uA Emitter Cutoff Current VEB = - 4V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = - 2.0A / - 0.2A VCE(SAT) -- - 0.3 - 0.5 V DC Current Transfer Ratio VCE = - 2V, IC = - 1A hFE 160 -- 350 Transition Frequency VCE = - 5V, IC = - 100mA, f = 100MHz fT -- 80 -- MHz Output Capacitance VCB = - 10V, f=1MHz Cob 55 -- pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Pin assignment: TO-92 1. Emitter 2. Collector 3. Base SOT-89 1. Base 2. Collector 3. Emitter |
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