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TS79L05CY Scheda tecnica(PDF) 6 Page - Taiwan Semiconductor Company, Ltd |
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TS79L05CY Scheda tecnica(HTML) 6 Page - Taiwan Semiconductor Company, Ltd |
6 / 8 page TS79L00 series 6-8 2003/12 rev. D TS79L24 Electrical Characteristics (Vin= -33V, Iout=40mA, 0 oC≤Tj≤125 oC, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Unit Tj=25 oC - 23.07 - 24 - 24.96 Output Voltage Vout -27V ≤Vin≤ -38V, 5mA ≤Iout≤100mA - 22.85 - 24 - 25.20 V Line Regulation REGline Tj=25 oC -27V ≤Vin≤ -38V, Io=40mA -- 200 400 mV 5mA ≤Iout≤100mA -- 80 240 Load Regulation REGload Tj=25 oC 5mA ≤Iout≤40mA -- 40 120 Quiescent Current Iq Iout=0, Tj=25 oC -- 4 7 -28V ≤Vin≤ -38V -- -- 1.5 Quiescent Current Change ∆lq 5mA ≤Iout≤40mA -- -- 0.1 mA Output Noise Voltage Vn 10Hz ≤f≤100KHz, Tj=25 oC -- 200 -- uV Ripple Rejection Ratio RR f=120Hz, -29V ≤Vin≤ -35V 31 45 -- dB Voltage Drop Vdrop Tj=25 oC -- 1.7 -- V Peak Output Current Io peak Tj=25 oC -- 0.15 -- A Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as possible, and thermal effects must be taken into account separately. This specification applies only for DC power dissipation permitted by absolute maximum ratings. |
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