AM29DL642G90I datasheet(11/54 Pages) AMD

Il numero della parte	AM29DL642G90I

Spiegazioni elettronici	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo

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Produttore elettronici	AMD [Advanced Micro Devices]

Homepage	http://www.amd.com

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11 / 54 page

June 10, 2005

Am29DL642G

9

PRELIMINARY

DEVICE BUS OPERATIONS

This section describes the requirements and use of

the device bus operations, which are initiated through

the internal command register. The command register

itself does not occupy any addressable memory loca-

tion. The register is a latch used to store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

register serve as inputs to the internal state machine.

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the in-

puts and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1.

Am29DL642G Device Bus Operations

Legend: L = Logic Low = V

IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,

A

IN = Address In, DIN = Data In, DOUT = Data Out

Notes:

1. Addresses are A21:A0.

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector

Block Protection and Unprotection” section.

3. CE# can be replaced with CE2# when referring to the second die in the package. CE# and CE2# must not both be driven at the

same time.

4. If WP#/ACC = V

IL, sectors 0, 1, 140, and 141 remain protected. If WP#/ACC = VIH, protection on sectors 0, 1, 140, and 141

depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection

and Unprotection”. If WP#/ACC = V

HH, all sectors will be unprotected.

Requirements for Reading Array Data

To read array data from the outputs, the system must

drive the CE# and OE# pins to VIL. CE# is the power

control and selects the device. OE# is the output con-

trol and gates array data to the output pins. WE#

should remain at V

IH.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory

content occurs during the power transition. No com-

mand is necessary in this mode to obtain array data.

Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid

data on the device data outputs. Each bank remains

enabled for read access until the command register

contents are altered.

Refer to the AC Read-Only Operations table for timing

specifications and to Figure 13 for the timing diagram.

I

CC1 in the DC Characteristics table represents the ac-

tive current specification for reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which in-

cludes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# (or CE2#) to VIL, and OE# to VIH.

Operation

CE#

(Note 3)

OE#

WE#

RESET#

WP#/ACC

Addresses

(Note 1)

DQ15–

DQ0

Read

L

H

L/H

A

IN

D

OUT

Write

L

H

L

H

(Note 4)

A

IN

D

IN

Standby

V

CC ±

0.3 V

XX

V

CC ±

0.3 V

L/H

X

High-Z

Output Disable

L

H

L/H

X

High-Z

Reset

X

L

L/H

X

High-Z

Sector Protect (Note 2)

L

H

L

V

ID

L/H

SA, A6 = L,

A1 = H, A0 = L

D

IN

Sector Unprotect (Note 2)

L

H

L

V

ID

(Note 4)

SA, A6 = H,

A1 = H, A0 = L

D

IN

Temporary Sector Unprotect

X

V

ID

(Note 4)

A

IN

D

IN

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