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FM2100-LN Scheda tecnica(PDF) 1 Page - Formosa MS

Il numero della parte FM2100-LN
Spiegazioni elettronici  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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Produttore elettronici  FORMOSA [Formosa MS]
Homepage  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM2100-LN Scheda tecnica(HTML) 1 Page - Formosa MS

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FM220-LN THRU FM2100-LN
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0017 ounce, 0.057 gram
(V)
(V)
(V)
(V)
(
oC)
FM220-LN
SK22
20
14
20
FM230-LN
SK23
30
21
30
FM240-LN
SK24
40
28
40
FM250-LN
SK25
50
35
50
FM260-LN
SK26
60
42
60
FM280-LN
SK28
80
56
80
FM2100-LN
S210
100
70
100
0.70
-55 to +125
-55 to +150
0.85
0.50
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
50
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
75
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
160
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
0.067(1.7)
0.053(1.3)
Dimensions in inches and (millimeters)
SMA-LN


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