Motore di ricerca datesheet componenti elettronici |
|
SI2318DS-T1-GE3 Scheda tecnica(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
|
SI2318DS-T1-GE3 Scheda tecnica(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 9 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =10 V thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.00 0.02 0.0 3 0.0 4 0.0 5 0.10 0 369 12 15 VGS =4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 0 1234 5 VDS =24 V VDS =7.5 V ID =3.4 A VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 50 100 150 200 250 300 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 ID =3.2 A VGS =10 V TJ -Junction Temperature (°C) www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2318DS-T1-GE3 3 |
Codice articolo simile - SI2318DS-T1-GE3 |
|
Descrizione simile - SI2318DS-T1-GE3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |