Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

SI2301CDS-T1-GE3 Scheda tecnica(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Il numero della parte SI2301CDS-T1-GE3
Spiegazioni elettronici  P-Channel 20-V (D-S) MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SI2301CDS-T1-GE3 Scheda tecnica(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  SI2301CDS-T1-GE3 Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd SI2301CDS-T1-GE3 Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 13.4
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
2.9
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.5
- 1.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
- 18
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 5.1 A
0.035
VGS = - 4.5 V, ID = - 4.5 A
0.043
VGS = - 2.5 V, ID = - 3.7 A
0.061
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 5.1 A
15
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
835
pF
Output Capacitance
Coss
180
Reverse Transfer Capacitance
Crss
155
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
10
nC
VDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A
6.4
Gate-Source Charge
Qgs
1.7
Gate-Drain Charge
Qgd
3.4
Gate Resistance
Rg
f = 1 MHz
0.9
4.4
8.8
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 2.4 
ID = - 4.1 A, VGEN = - 4.5 V, Rg = 1 
22
33
ns
Rise Time
tr
20
30
Turn-Off Delay Time
td(off)
28
42
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 2.1
A
Pulse Diode Forward Currenta
ISM
- 20
Body Diode Voltage
VSD
IS = - 4.1 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C
23
35
ns
Body Diode Reverse Recovery Charge
Qrr
12
20
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
8
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
SI2301CDS-T1-GE3
2


Codice articolo simile - SI2301CDS-T1-GE3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Vishay Siliconix
SI2301CDS-T1-GE3 VISHAY-SI2301CDS-T1-GE3 Datasheet
103Kb / 6P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 23-Jun-08
More results

Descrizione simile - SI2301CDS-T1-GE3

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Vishay Siliconix
SI9400DY VISHAY-SI9400DY Datasheet
58Kb / 4P
   P-Channel 20-V (D-S) MOSFET
Rev. K, 02-Mar-98
SI9424BDY VISHAY-SI9424BDY Datasheet
44Kb / 5P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 07-Oct-02
SI8407DB VISHAY-SI8407DB Datasheet
69Kb / 6P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 17-Jan-05
SI7401DN VISHAY-SI7401DN Datasheet
240Kb / 3P
   P-Channel 20-V (D-S) MOSFET
31-May-01
SI7403BDN VISHAY-SI7403BDN Datasheet
106Kb / 8P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 21-Mar-05
SIS407DN-T1-GE3 VISHAY-SIS407DN-T1-GE3 Datasheet
548Kb / 13P
   P-Channel 20 V (D-S) MOSFET
Rev. B, 06-Sep-10
SI4477DY-T1-GE3 VISHAY-SI4477DY-T1-GE3 Datasheet
261Kb / 10P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 18-May-09
SIA431DJ VISHAY-SIA431DJ Datasheet
221Kb / 9P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 21-May-12
SI1077X VISHAY-SI1077X Datasheet
183Kb / 8P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 24-Dec-12
SI5457DC VISHAY-SI5457DC Datasheet
244Kb / 11P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 06-Sep-10
logo
Analog Power
AM4421P ANALOGPOWER-AM4421P Datasheet
423Kb / 5P
   P-Channel 20-V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com