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SFT1443-H Scheda tecnica(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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SFT1443-H Scheda tecnica(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 7 page Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 40 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 3 A 0. VGS = 10 V, ID = 3 A, TJ = 125 °C 0. VGS = 10 V, ID = 3 A, TJ = 175 °C 0. 140 VGS = 4.5 V ID = 3 A 0. Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 35 S Dynamica Input Capacitance Ciss VGS = 0 V, VDS = 25 V, F = 1 MHz 950 pF Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 60 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 3 A 24 41 nC Gate-Source Chargec Qgs 8 Gate-Drain Chargec Qgd 12 Gate Resistance Rg 0.5 2.9 Turn-On Delay Timec td(on) VDD = 50 V, RL = 5.2 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 15 25 ns Rise Timec tr 50 75 Turn-Off Delay Timec td(off) 30 45 Fall Timec tf 60 90 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM 5 A Diode Forward Voltageb VSD IF = 3 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 3 A, dI/dt = 100 A/µs 180 250 ns 114 1 20 1 20 1.0 2.5 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SFT1443-H 2 |
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