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SI7390DP Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI7390DP Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 5 page www.vishay.com 4 Document Number: 72214 S-51773-Rev. C, 31-Oct-05 Vishay Siliconix Si7390DP New Product TYPICAL CHARACTERISTICS 25 °C unless noted Threshold Voltage - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 A TJ - Temperature (˚C) Single Pulse Power 0 60 100 20 40 Time (sec) 1600 10 80 0.1 0.01 100 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 100 ms 0.1 Limited by rDS(on) TC = 25˚C Single Pulse 1 s 10 s dc 10 ms Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125˚C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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