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TPCA8103 Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor |
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TPCA8103 Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCA8103 2004-01-16 5 RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Total gate charge Qg (nC) 100 −0.1 −1 −10 −100 1000 10000 100000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C −1.2 0 −80 −40 0 40 120 160 80 −0.4 −0.8 −1.6 −2.0 Common source VDS = −10 V ID = −1 mA Pulse test 0 −80 −40 0 40 120 160 80 5 15 20 ID = −40 A, −20 A, −10 A ID = −40 A, −20 A, −10 A VGS = −4 V −10 V Common source Pulse test 10 0 −0.1 −1 −10 −1000 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0 V −1 −10 −5 −3 Common source Ta = 25°C Pulse test −100 Dynamic input/output characteristics 0 −10 −20 −30 0 40 80 120 160 Common source ID = −13 A Ta = 25°C Pulse test VDD = −24 V VDS VGS −30 −20 0 −10 240 VDD = −24 V −12 −12 −6 −6 200 |
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