Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

HUFA76404DK8T Scheda tecnica(PDF) 7 Page - Fairchild Semiconductor

Il numero della parte HUFA76404DK8T
Spiegazioni elettronici  N-Channel Dual MOSFET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA76404DK8T Scheda tecnica(HTML) 7 Page - Fairchild Semiconductor

Back Button HUFA76404DK8T Datasheet HTML 3Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 4Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 5Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 6Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 7Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 8Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 9Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 10Page - Fairchild Semiconductor HUFA76404DK8T Datasheet HTML 11Page - Fairchild Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 12 page
background image
HUFA76404DK8T Rev. B
www.fairchildsemi.com
7
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application.
Therefore
the
application’s
ambient
temperature, TA (
oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the SO8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of PDM is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild
provides
thermal
information
to
assist
the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
temperature
or
power
dissipation.
Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2. The area, in square inches is the top copper
area including the gate and source pads.
The transient thermal impedance (ZθJA) is also effected by
varied top copper board area. Figure 22 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
Therefore, CTHERM1 through CTHERM5 and RTHERM1
through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
in Table 1.
(EQ. 1)
PDM
TJM TA
()
RθJA
-------------------------------
=
(EQ. 2)
RθJA 79.9
15
0.14 Area
+
-------------------------------
+
=
100
150
200
0.001
0.01
1
10
50
0.1
Figure 21. Thermal Resistance vs Mounting
Pad Area
RθJA = 79.9 + 15/(0.14+Area)
AREA, TOP COPPER AREA (in2)
Figure 22. Thermal Impedance vs Mounting Pad Area
0
40
80
120
160
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
COPPER BOARD AREA - DESCENDING ORDER
0.020 in2
0.140 in2
0.257 in2
0.380 in2
0.493 in2


Codice articolo simile - HUFA76404DK8T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Fairchild Semiconductor
HUFA76407D3 FAIRCHILD-HUFA76407D3 Datasheet
234Kb / 10P
   11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUFA76407D3S FAIRCHILD-HUFA76407D3S Datasheet
234Kb / 10P
   11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUFA76407DK8 FAIRCHILD-HUFA76407DK8 Datasheet
263Kb / 12P
   3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUFA76407DK8T FAIRCHILD-HUFA76407DK8T Datasheet
263Kb / 12P
   3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
logo
ON Semiconductor
HUFA76407DK8T-F085 ONSEMI-HUFA76407DK8T-F085 Datasheet
976Kb / 7P
   Dual N-Channel Logic Level UltraFET짰 Power MOSFET 60 V, 3.5 A, 105 m廓
September-2017, Rev. 2
More results

Descrizione simile - HUFA76404DK8T

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
SeCoS Halbleitertechnol...
SSI2154 SECOS-SSI2154 Datasheet
562Kb / 4P
   Dual N-Channel MOSFET
logo
Guangdong Kexin Industr...
AO6804A-HF KEXIN-AO6804A-HF Datasheet
1Mb / 4P
   Dual N-Channel MOSFET
AO6808-HF KEXIN-AO6808-HF Datasheet
1Mb / 4P
   Dual N-Channel MOSFET
AO6810 KEXIN-AO6810 Datasheet
1Mb / 4P
   Dual N-Channel MOSFET
KX4N03W KEXIN-KX4N03W Datasheet
1Mb / 6P
   Dual N-Channel MOSFET
SI9926DY-HF KEXIN-SI9926DY-HF Datasheet
572Kb / 2P
   Dual N-Channel MOSFET
logo
Micro Commercial Compon...
MCS8804 MCC-MCS8804 Datasheet
580Kb / 4P
   Dual N-Channel MOSFET
logo
Guangdong Kexin Industr...
AO4822 KEXIN-AO4822 Datasheet
2Mb / 5P
   Dual N-Channel MOSFET
AO4822A-HF KEXIN-AO4822A-HF Datasheet
2Mb / 5P
   Dual N-Channel MOSFET
AO4822-HF KEXIN-AO4822-HF Datasheet
2Mb / 5P
   Dual N-Channel MOSFET
AO4832 KEXIN-AO4832 Datasheet
1Mb / 5P
   Dual N-Channel MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com