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FDS6670AS_NL Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor

Il numero della parte FDS6670AS_NL
Spiegazioni elettronici  30V N-Channel PowerTrench SyncFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6670AS_NL Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor

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FDS6670AS Rev A (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics
of
the
body diode
of
an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
VDS, REVERSE VOLTAGE (V)
100
oC
25
oC
125
oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
TIME : 12.5ns/div


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