FDS4895C datasheet(6/8 Pages) FAIRCHILD

Il numero della parte	FDS4895C

Spiegazioni elettronici	Dual N & P-Channel PowerTrench MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FDS4895C Rev C(W)

Typical Characteristics: Q2 (P-Channel)

0

5

10

15

20

25

30

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V

-6.0V

-4.0V

-4.5V

-3.0V

-3.5V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0

5

10

15

20

25

30

-ID, DRAIN CURRENT (A)

VGS = - 3.5V

-6.0V

-4.5V

-4.0V

-10V

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (

oC)

ID = -4.4A

VGS = - 10V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

2

4

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -2.2A

TA = 125

o

C

TA = 25

oC

Figure 13. On-Resistance Variation with

Temperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

1.5

2

2.5

3

3.5

4

4.5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

oC

25

oC

125

o

C

VDS = -10V

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

VGS = 0V

TA = 125

oC

25

oC

-55

o

C

Figure 15. Transfer Characteristics.

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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