SI6993DQ-T1 datasheet(3/5 Pages) VISHAY

Il numero della parte	SI6993DQ-T1

Spiegazioni elettronici	Dual P-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si6993DQ

Vishay Siliconix

New Product

Document Number: 72369

S-31912—Rev. A, 15-Sep-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

400

800

1200

1600

2000

0

5

10

15

20

25

30

0.60

0.80

1.00

1.20

1.40

1.60

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

0

3

6

9

12

15

0.00

0.02

0.04

0.06

0.08

0.10

0

5

10

15

20

25

30

VDS - Drain-to-Source Voltage (V)

Crss

VDS = 15 V

ID = 4.7 A

ID - Drain Current (A)

VGS = 10 V

ID = 4.7 A

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.3

0.6

0.9

1.2

1.5

0.00

0.03

0.06

0.09

0.12

0.15

0

2468

10

TJ = 25_C

ID = 4.7 A

30

10

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

VGS = 4.5 V

TJ = 150_C

VGS = 10 V

Coss

Ciss

1

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