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FQP11N50CF Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FQP11N50CF Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page 4 www.fairchildsemi.com FQP11N50CF/FQPF11N50CF Rev. A Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP11N50CF for FQPF11N50CF Figure 10. Maximum Drain Current vs. Case Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. V GS = 0 V 2. I D = 250µA T J, Junction Temperature [°C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 5.5 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 µs DC 10 ms 100 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 µs DC 10 ms 100 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 12 T J, Junction Temperature [ oC] |
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