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2SA1603S Scheda tecnica(PDF) 1 Page - Isahaya Electronics Corporation |
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2SA1603S Scheda tecnica(HTML) 1 Page - Isahaya Electronics Corporation |
1 / 3 page DESCRIPTION 2SA1603 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. ※) It shows hFE classification in below table. 〈SMALL-SIGNAL TRANSISTOR〉 2SA1603 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit VCBO Collector to Base voltage -50 V VCEO Collector to Emitter voltage -50 V VEBO Emitter to Base voltage -6 V I O Collector current -100 mA Pc Collector dissipation 150 mW Tj Junction temperature +125 ℃ Tstg Storage temperature -55∼+125 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) Limits Parameter Symbol Test conditions Min Typ Max Unit C to E break down voltage V(BR)CEO I C=-100μA ,R BE=∞ -50 - - V Collector cut off current ICBO V CB=-50V, I E=0mA - - -0.5 μA Emitter cut off current IEBO V EB=-4V, I C=0mA - - -0.5 μA DC forward current gain hFE V CE=-6V, I C=-1mA ※ 120 - 820 DC forward current gain hFE V CE=-6V, I C=-0.1mA 70 - - C to E Saturation Vlotage VCE(sat) I C=-30mA ,IB=-1.5mA - - -0.3 V Gain bandwidth product fT V CE=-6V, I E=10mA - 200 - MHz Collector output capacitance Cob V CB=-6V, I E=0,f=1MHz - 2.5 - pF JEITA:SC-70 TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR 0.425 1.25 0.425 2.1 ① ② ③ ISAHAYA ELECTRONICS CORPORATION Item Q R S T hFE Item 120270 180390 270560 390820 |
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